Metalorganic vapor phase epitaxy 1994MINAGAWA, SHIGEKAZU; HORIKOSHI, YOSHIJI.Journal of crystal growth. 1994, Vol 145, Num 1-4, issn 0022-0248, 1022 p.Conference Proceedings

Growth of GaSb on GaAs substratesGRAHAM, R. M; JONES, A. C; MASON, N. J et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 363-370, issn 0022-0248Conference Paper

Monolayer control of chemical beam etchingTSANG, W. T; CHIU, T. H; KAPRE, R. M et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 680-686, issn 0022-0248Conference Paper

MOCVD growth on AlGaAs substratesKOHAMA, Y; OHISO, Y; TATENO, K et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 970-971, issn 0022-0248Conference Paper

Surface processes before and during growth of GaAs (001)PLOSKA, K; ZETTLER, J.-T; RICHTER, W et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 44-52, issn 0022-0248Conference Paper

Cathodoluminescence characterization of nitrogen-doped ZnSeBOLLIG, B; BLAUERMEL, M; TAUDT, W et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 562-569, issn 0022-0248Conference Paper

Ti doping of InP and GaInAs using TiCl₄CANEAU, C; BHAT, R; SCHWARZ, S. A et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 427-434, issn 0022-0248Conference Paper

Growth of GaInAsSb using tertiarybutylarsine as arsenic sourceSOPANEN, M; KOLJONEN, T; LIPSANEN, H et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 492-497, issn 0022-0248Conference Paper

Epitaxial growth of ZnMgSSe on GaAs substrate by metalorganic chemical vapor depositionTODA, A; ASANO, T; FUNATO, K et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 537-540, issn 0022-0248Conference Paper

Evaluation of p-n junction shift by the capacitance-voltage methodYAMAMOTO, N; YAMAMOTO, M.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 941-946, issn 0022-0248Conference Paper

Intermediate range between N-doped GaP and GaP_1-xN_x alloys: difference in optical propertiesMIYOSHI, S; YAGUCHI, H; ONABE, K et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 87-92, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy growth and nitrogen-doping of Zn_xCd_1-xS using photo-assistanceDUMONT, H; FUJITA, SZ; FUJITA, SG et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 570-575, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy using organic group V precursorsKOMENO, J.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 468-472, issn 0022-0248Conference Paper

Fast evolution of surface dynamics during epitaxy of GaAs on c(4×4) reconstructed surfaceSUIAN ZHANG; JIE CUI; TANAKA, A et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 974-975, issn 0022-0248Conference Paper

High-purity AlGaAs from methyl-based precursors using in-situ gettering of alkoxidesROBERTS, J. S; DAVID, J. P. R.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 968-969, issn 0022-0248Conference Paper

Atomic layer controlled metalorganic chemical vapor deposition of superconducting YBa₂Cu₃O_x filmsODA, S; ZAMA, H; YAMAMOTO, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 232-236, issn 0022-0248Conference Paper

Growth of GaP by cold-wall metalorganic-chloride vapor phase epitaxyMIURA, Y; USHIJIMA, S; TAKAHASHI, N et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 93-98, issn 0022-0248Conference Paper

Mechanism of Zn passivation in AlGaInP layer grown by metalorganic chemical vapor depositionKADOIWA, K; KATO, M; MOTODA, T et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 147-152, issn 0022-0248Conference Paper

Mechanisms of decomposition of group VI dialkyls and alkylhydrides in the gas phase from studies of designed precursorsFOSTER, D. F; BELL, W; STEVENSON, J et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 520-529, issn 0022-0248Conference Paper

New allyl selenide and trialkylphosphine selenide precursors for metalorganic vapor phase epitaxy of ZnSeDANEK, M; JEUNG-SOO HUH; FOLEY, L et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 530-536, issn 0022-0248Conference Paper

Order/disorder heterostructure in Ga_0.5In_0.5P with ΔE_g=160 meVSU, L. C; HO, I. H; KOBAYASHI, N et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 140-146, issn 0022-0248Conference Paper

Ordering in strained Ga_xIn_1-xP quantum wells grown by metalorganic vapor phase epitaxyGENG, C; MOSER, M; WINTERHOFF, R et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 740-745, issn 0022-0248Conference Paper

Preparation of II-VI quantum dot composites by electrospray organometallic chemical vapor depositionDANEK, M; JENSEN, K. F; MURRAY, C. B et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 714-720, issn 0022-0248Conference Paper

Surface orientation dependence of growth rate of cubic GaNNAGAHARA, M; MIYOSHI, S; YAGUCHI, H et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 197-202, issn 0022-0248Conference Paper

Highly uniform InGaAs quantum dots (∼15 nm) grown by MOVPE on GaAsOSHINOWO, J; NISHIOKA, M; ISHIDA, S et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 986-987, issn 0022-0248Conference Paper